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中国物理学会期刊

反应离子刻蚀ZnTe的THz辐射和探测研究

CSTR: 32037.14.aps.54.4938

Generation and detection of terahertz radiation on reactive ion etched ZnTe surfaces

CSTR: 32037.14.aps.54.4938
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  • 运用电光采样技术揭示了反应离子刻蚀(RIE)ZnTe晶体表面THz辐射的光学整流产生机制, 观察到0.25 ps的THz场分布.通过比较刻蚀前后以及不同刻蚀条件下ZnTe样品在不同激发功 率下的THz辐射强度,发现由于反应离子刻蚀破坏了ZnTe样品表面的有序性,晶体的电光系 数随射频功率的增加而减小.借助于计算不同刻蚀条件下ZnTe晶体的频率响应函数,分析了 随射频功率增加ZnTe晶体响应频谱展宽的现象.

     

    Electro-optic sampling technique is employed to reveal the generation of teraher tz (THz) radiation via optical rectification from reactive ion etched ZnTe surfa ces. The pulsewidth of the observed THz radiation is ~0.25ps. The electro-optic coefficient of the ZnTe samples is found to decrease with the increase of the r adio frequency (RF) power. By calculating the frequency response function, we di scuss the THz bandwidth under different values of RF plasma power.

     

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