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中国物理学会期刊

利用脉冲激光沉积技术在双轴织构的Ni基带上外延CeO2薄膜

CSTR: 32037.14.aps.54.5820

Pulsed laser deposition of epitaxial CeO2 thin films on biaxially textured Ni substrate

CSTR: 32037.14.aps.54.5820
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  • 利用脉冲激光沉积技术在氢还原气氛下成功地在双轴织构的Ni基带上外延了高质量的CeO2薄膜. x射线衍射θ—2θ扫描和ω扫描结果表明,CeO2薄膜在Ni基带上呈c轴方向生长,存在很强的平面外织构;极图和φ扫描显示它具有良好的平面内织构. Ni基片上织构的CeO2薄膜为进一步在其上外延高质量的YBa2Cu3O7-x超导薄膜提供了很好的模板.

     

    High-quality epitaxial CeO2 thin films were fabricated on the biaxially textured Ni substrates by pulsed laser deposition using a gas mixture of 4%H2 and 96%Ar. X-ray diffraction θ—2θ scan and ω-scan indicate the CeO2 thin films are c-axis textured, and φ-scan and pole figure of the films reveal the presence of good in-plane texture. The biaxially textured CeO2 films provide a good template for the fabrication of YBCO conductors.

     

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