In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22×102Pa) selective area growth (SAG) MOCVD technique. Superior device performances have been obtained, such as low threshold current of 19 mA, output light power of about 7 mW, and over 16 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3 dB bandwidth in EAM part is developed with a driving voltage of 3 V. After the chip is packaged into a 7-pin butterfly compact module, 10-Gb/s NRZ transmission experiments are successfully performed in standard fiber. A clearly-open eye diagram is achieved in the module output with over 8.3 dB dynamic extinction ratio. Power penalty less than 1.5 dB has been obtained after transmission through 53.3 km of standard fiber, which demonstrates that high-speed, low chirp EAM/DFB integrated light source can be obtained by ultra-low-pressure (22×10\+2Pa) SAG method.