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中国物理学会期刊

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

CSTR: 32037.14.aps.55.1441

Colossal magnetoresistance effect in the perovskite-type La1-xPrxMnO3 thin films

CSTR: 32037.14.aps.55.1441
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  • 一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0 .2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示 薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CM R)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体 系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.

     

    The oxide La1-xPrxMnO3 (x=0.1, 0.2) thin film s howing colossal magnetoresistance has been epitaxially grown on (100) SrTiO 3 single-crystal substrate by pulsed-laser deposition. The films have a pe rovskite structure and perform the colossal magnetoresistance effect with the ma ximum magnetoresistance ratio of 95% under the magnetic field of 5 T. The valenc e of Pr is confirmed as +4 through XPS. Therefore the epitaxial film is most lik ely an electron-doped colossal magnetoresistance fihn.

     

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