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主要研究负栅压偏置不稳定性(negative bias temperature instability，NBTI)效应中的自愈合效应，研究了器件阈值电压随着恢复时间和应力时间的恢复规律.研究表明器件的退化可以恢复是由于NBTI应力后界面态被氢钝化.
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关键词:
- 负偏置温度不稳定性效应 /
- 自愈合效应 /
- 应力时间 /
- PMOSFET
The NBTI effect is studied in this paper with emphasis on its self-healing phenomenon. The recovery of threshold voltage shift with stress times and recovery time are studied. It is found that the recovery is mainly related to the re-passivation by hydrogen of interface states that occurred after the stress is stopped.-
Keywords:
- NBTI /
- self-Healing /
- stress time /
- PMOSFET
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中国物理学会期刊
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