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中国物理学会期刊

Cu掺杂对FexPt1-x薄膜有序化的影响

CSTR: 32037.14.aps.55.2567

The effect of Cu doping on the ordering of FexPt1-x thin films

CSTR: 32037.14.aps.55.2567
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  • 利用磁控溅射制备了薄膜厚度为50nm的系列(FexPt1-x)100-yCuy(x=0.46—0.56,y=0,0.04,0.12) 样品.利用直流共溅射方法精确控制Fe和Pt的原子比.实验结果表明,当x>0.52时,样品中添加Cu不能促进FePt的有序化,但是对于FePt化学原子定比或富Pt的样品,添加Cu可以促进FePt有序化,而且随着Fe含量的减少,需要更多的Cu添加才能实现较低温度下FePt薄膜的有序化.实验结果表明,原子比(FeCu)/Pt达到1.1—1.2的范围时,即可实现较低温度的有序化.

     

    (FexPt1-x)100-yCuy(x=0.46—0.56,y=0,0.04,0.12) thin films with a fixed thickness of 50nm have been prepared by magnetron sputtering. The atomic ratio of Fe to Pt atoms was accurately controlled by DC co-sputtering. The ordering parameter of the L10 phase is not enhanced for the films with x>0.52. On the contrary, the ordering process is improved by the addition of Cu for the Pt-rich or stoichiometric thin films. In order to get the ordering of FePt films at a low annealing temperature, the lower the Fe content, the more addition of Cu is needed. It is found that the L10 phase can be obtained after annealing at 350℃ for 20 min only for films with the ratio of the (FeCu)/Pt in the range of 1.1—1.2.

     

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