搜索

x
中国物理学会期刊

Nd1.85Ce0.15CuO4-δ单晶c-轴方向电阻的低场行为

CSTR: 32037.14.aps.55.3018

Resistivity of Nd1.85Ce0.15CuO4-δ single crystal along c-axis in lower field

CSTR: 32037.14.aps.55.3018
PDF
导出引用
  • 采用自助熔剂缓冷法成功地生长出了Nd1.85Ce0. 15CuO4-δ单晶,其零场下零电阻温度约为21K. 在0—0.5T范围内分别测量了磁场平行和垂直样品表面的电阻转变曲线以及0.5T不同角度下的电阻转变曲线. 结果显示磁场平行和垂直样品表面时的转变温度Tp随磁场的变化均服从H=H0(1-Tp(h)/Tp(0))2关系. 0.5T

     

    Nd1.85Ce0.15CuO4-δsingle crystals with zero-resistance temperature Tc0≈21K were successfully grown by self-flux slow cooling method. We have measured the resistivity transition curves along the c-axis in different fields parallel or perpendicular to the sample surface, respectively, and at fixed field H=0.5T for various angles. The result shows that the field dependence of differential-resistance peak temperature Tp follows the formula H=H0(1-Tp(h)/Tp(0))2 for H//c-axis and H//ab-plane, respectively. The angular dependence of peak temperature Tp can be scaled by the effective mass model as Tp∝H1/2(cos2θ+sin2θ/γ2)1/4. The anisotropic parameter γ of the crystal is about 45.

     

    目录

    /

    返回文章
    返回