Highly (111)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) films with a variety of PZT buffer layer thickness were prepared by spin coating on Pt/Ti/SiO2/Si substrates with Sol-Gel process. The thickness of PZT buffer layer was found to play a significant role on grain size and orientation of Pb(Zr0.52Ti0.48)O3 films. With the increasing of PZT buffer layer thickness, both crystallization and orientation were improved obviously. High dielectric constant (1278, 1kHz, for 28nm buffer), low dielectric loss (0.023, 1kHz, for 28nm buffer), symmetric C-V characteristics and P-E curves were obtained. Hysteresis measurements show that the remnant polarization and coercive field of the films reach 43μC·cm-2 and 78kV·cm-1, respectively.