We studied the low temperature (15K) photoluminescence properties of un-doped GaAs(110) quantum wells modulated by surface acoustic waves (SAW) by photoluminescence (PL) spectroscopy technique. Under the influence of the SAW, the decreasing of PL intensity and the splitting of the PL lines were observed. The magnitude of the splitting can be up to 10meV when the power applied to the transducers is 20dBm. Furthermore, the spin injection in GaAs(110) quantum wells generated by circular polarization light under the influence of SAW was also discussed.