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运用压电调制反射光谱(PzR)方法测量了在以GaAs(311)B为衬底的In0.35Ga0.65As模板上生长的InAs表面量子点结构的反射谱.在77K温度下，观察到了来自样品各个组成结构(包括表面量子点本身、被覆盖层覆盖的量子点、In0.35Ga0.65As模板以及GaAs衬底等)的调制信号.来自表面量子点本身的调制信号是多个清晰的调制峰.用一阶和三阶微分洛伦兹线形对PzR谱中对应结构的实验数据进行了拟合，精确确定了与样品的各个组成结构相对应的调制峰的能量位置.对不同样品PzR谱的差异进行了定性的说明.
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关键词:
- 压电调制光谱 /
- InAs/GaAs 表面量子点 /
- 洛伦兹线形拟合
Piezomodulated reflectance (PzR) spectra have been measured for two samples of InAs surface quantum dots (SQDs) deposited on GaAs (311)B substrates with In0.35Ga0.65As template. At 77K multiple confined-state SQDs transitions can be clearly resolved from the PzR spectra . The detailed optical transition features of SQDs, QDs buried by capping layer, In0.35Ga0.65As template and GaAs substrate layers were obtained from well-fitted PzR spectra using the first or third derivative of a Lorentz line shape. Differences between PzR results of two samples were discussed qualitatively.
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中国物理学会期刊
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