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中国物理学会期刊

窄禁带稀磁半导体二维电子气的拍频振荡

CSTR: 32037.14.aps.55.786

Beating oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor

CSTR: 32037.14.aps.55.786
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  • 通过对调制掺杂的n型Hg0.82Cd0.16Mn0.02Te/Hg0.3Cd0.7Te第一类量子阱中磁性二维电子气磁阻拍频振荡的研究,发现温度、栅压的变化都会引起磁阻拍频节点位置的变化.从对拍频的分析中,可以将依赖于栅压的Rashba自旋-轨道分裂和依赖于温度的巨大塞曼分裂区分开来.

     

    This paper studies the detailed beating oscillation in Shubnikov-de Hass (SdH) of magnetic two dimensional electron gas consisting of a modulation doped n type Hg0.82Cd0.16Mn0.02Te/Hg0.3Cd0.7Te first type quantum well, by which found that temperature, gate voltage are both bring the variety of magnetic resistance beating node position. By analyzing beating patterns, gate voltage dependent Rashba spin-orbit splitting can be separated from temperature dependent giant Zeeman splitting.

     

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