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中国物理学会期刊

基于碳纳米管场效应管构建的纳电子逻辑电路

CSTR: 32037.14.aps.56.1054

Nanoelectronic logic circuits with carbon nanotube transistors

CSTR: 32037.14.aps.56.1054
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  • 展示了由碳纳米管场效应管构成的三种逻辑电路,分别为单个p型碳纳米管场效应管的开关电路、由集成在同一片硅片上的单个p型碳纳米管场效应管和单个n型掺氮碳纳米管场效应管构成的互补型反相器,以及两个独立的p型碳纳米管场效应管构成的或非门. 其中p型碳纳米管场效应管以单壁碳纳米管作为沟道,而n型碳纳米管场效应管则以掺氮的多壁碳纳米管作为沟道,器件的源漏电极均为铂电极.

     

    We demonstrate logic circuits with carbon nanotube field-effect transistors (CNTFETs). The p-type CNTFETs are fabricated based on single-walled carbon nanotubes and n-type CNTFETs are fabricated based on nitrogen-doped multiwalled carbon nanotubes. To be specitic, we demonstrate three types of logic circuits with CNTFETs, which include an inverter (a p-type CNTFET), a complementary inverter (a p-type CNTFET and an n-type CNTFET in a single clip), and a logic NOR (two p-type CNTFETs).

     

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