搜索

x
中国物理学会期刊

Co掺杂对ZnO薄膜结构和性能的影响

CSTR: 32037.14.aps.56.1116

Influence of Co doping on ZnO film

CSTR: 32037.14.aps.56.1116
PDF
导出引用
  • 采用PVA溶胶-凝胶方法,在玻璃衬底上制备了Zn1-xCoxO薄膜,利用X射线衍射仪(XRD)研究了不同Co含量对其微结构的影响.采用振动样品磁强计(VSM)测量了Zn0.88Co0.12O样品室温下的磁性.采用荧光光谱仪研究了Zn1-xCoxO样品室温下的发光特性,分析掺杂含量对其发光性能的影响,发现随着掺杂含量的增加,蓝光发光峰有一定的红移现象.

     

    The Co2+ ions doped ZnO diluted magnetic semiconductor films, Zn1-xCoxO, were prepared on glass substrate using PVA method. The structure of Zn1-xCoxO thin films with different x value and its photoluminescence properties were investigated. The vibrating sample magnetometer (VSM) measures the ferromagnetic properties of Zn0.88Co0.12O thin films at room temperature. We analyzed the influence of doping content on its luminescence performance, and discovered that with the doping content increasing, the blue luminescence peak shows a red shift.

     

    目录

    /

    返回文章
    返回