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使用基于重金属Ir的新磷光材料(tpbi)2Ir(acac)，制备了多层结构有机发光二极管器件: ITO/CuPc (40 nm)/α-NPD (45 nm)/CBP: (tpbi)2Ir(acac) (3%, 30nm)/BCP(20 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (100 nm).测试了材料的寿命、光谱吸收性质和器件的I-V-L特性.器件在低电压下电流符合热发射注入模型，高电压下I-V呈线形关系.不同偏压下器件发光光谱稳定，多峰拟合结果表明器件光谱由α-NPD发光峰(450 nm)，(tpbi)2Ir(acac)主发光峰(518 nm)和肩峰(543 nm)构成.驱动电压为6 V时，器件效率达到最大12.1 lm/W，此时亮度为136 cd/m2，器件亮度最大为13500 cd/m2，此时效率为0.584 lm/W.Multi-layer phosphorescent OLED with (tpbi)2Ir(acac) was fabricated which has the structure: ITO/CuPc (40 nm)/α-NPD (45 nm)/CBP: (tpbi)2Ir(acac) (3%, 30 nm)/BCP (20 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (100 nm). Absorption spectra, phosphorescence lifetime of Ir complex, and I-V-L characteristic of the device was tested. The current of the device under low applied voltage conforms to the Richaardon-Schotty emission, and shows linear relationship under high voltage. Gauss peak fit shows the OLED spectra to be composed of α-NPD peak(450 nm), (tpbi)2Ir(acac) main peak(518 nm) and shoulder peak(543 nm). Maximum power efficiency of PHOLED is 12.1 lm/W (at 6V) with luminance 136 cd/m2, and the maximum luminance is 13500 cd/m2 with power efficiency 0.584 lm/W.
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Keywords:
- OLED /
- phosphorescence /
- power efficiency /
- I-V-L characteristic /
- absorption spectrum
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中国物理学会期刊
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