To realize high deposition rate is an important problem in low-cost industrialization of microcrystalline silicon solar cells. Deposition of μc-Si:H films at a high rate was investigated using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) in this paper. The influence of gas residence time on de position rate and the photoelectric and micro structural properties in the CVD process were studied by changing total gas flow. As a result, the efficiency of the microcrystalline silicon solar cell prepared at deposition rate 12?/s reached 5.3%.