Cu(In,Ga)Se2 layers with thickness of 2 μm were prepared by co-evaporation on different substrates of soda-lime glass, Mo foil, Mo film without preferred orientation and (100)-oriented Mo film. X-ray diffraction measurements were carried out to study the influence of substrates on the preferential growth of the films. The (112) texture of Cu(In,Ga)Se2 films deposited on the four substrates mentioned above decreases the given order, while the (220/204) texture begins to appear at first and its intensity increases gradually. On the soda-lime glass and Mo foil surfaces, the Cu(In,Ga)Se2 film shows almost a pure (112) texture. On the contrary, the (220/204) Cu(In,Ga)Se2 surface orientation dominates on the substrate of (110)-oriented Mo film. On Mo film without preferred orientation, no evidence of significant texture exists in Cu(In, Ga)Se2 layers. These results indicate that, of the substrates investigated, only the (110)-oriented Mo film has significant influence on the formation of (220) texture in Cu(In,Ga)Se2 film.