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中国物理学会期刊

生长初期Ta膜的表面动态演化行为

CSTR: 32037.14.aps.56.6023

Surface dynamic evolution of Ta film growth in the initial stage

CSTR: 32037.14.aps.56.6023
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  • 用磁控溅射方法在单晶Si衬底上沉积膜厚为15—250nm的Ta膜.基于原子力显微镜获得的薄膜表面形貌,用动力学标度理论量化表征薄膜表面动态演化行为.结果表明:当膜厚dβ≈0.17,而d>50nm后β≈0.45;随着d增加,粗糙度指数α由0.24逐渐增加到0.69,且在d>50nm后趋于稳定.Ta膜的表面动态演化行为揭示了其由小岛聚合结构向连续膜演化的生长过程.与自阴影等非局域效应引起的非稳定行为不同的是,当dd继续增加,薄膜以连续膜形式生长,表面动态演化趋于稳定.

     

    Tantalum thin films with thicknesses varying from 15 to 250nm were grown on silicon substrates by magnetron sputtering. Surface morphology of the films was investigated by atomic force microscopy. Then the film surface dynamic evolution was analyzed within the framework of dynamic scaling theory. The results show that the growth exponent β is about 0.17 for the films thinner than 50nm and 0.45 for thicker films. With the increase of film thickness,the roughness exponent α increases from 0.24 to 0.69 and remains constant for the films thicker than 50nm. The dynamic surface evolution reveals the growth transition from island coalescence to bulk film growth. Surface islands prefer lateral growth to vertical growth during island coalescence.

     

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