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用于紫外探测器DBR结构的高质量AlGaN材料MOCVD生长及其特性研究

物理学报, 2007, 56(11): 6717-6721.
DOI: 10.7498/aps.56.6717
CSTR: 32037.14.aps.56.6717

MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector

Acta Phys. Sin., 2007, 56(11): 6717-6721.
DOI: 10.7498/aps.56.6717
CSTR: 32037.14.aps.56.6717
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  • 摘要

    利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同工艺条件下的高质量AlGaN材料的制备.得到了无裂纹的全组分AlxGa1-xN(0x<1)薄膜.通过XRD，SEM，AFM等测量分析方法系统研究了生长工艺参数对材料的结构质量、组分、厚度和表面形貌的影响.分析了不同生长工艺对AlGaN材料特性的影响.研制的高质量AlGaN材料在紫外探测器的DBR结构应用中得到比较好的特性.

     

    Abstract

    High quality AlGaN materials used in the DBR structure of ultraviolet detector are grown under different growth conditions. The structure, composition and photographic characteristics are determined by XRD, SEM and AFM. The influence of the growth conditions on the characteristics of the AlGaN materials are discussed.The good performance of the DBR structure of ultraviolet detector is obtained.

     

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