InGaN/GaN multiple quantum wells have been grown by metal-organic chemical vapor deposition. InGaN/GaN mulitiple quantum well with and without indium doped GaN barriers were study. The results show the sample with In-doped GaN barrier had a poor interface, but the photoluminescence spectrum showed clearly increased peak intensity and integral intensity, enhanced IBL/IYL ratio and reduced surface roughness. Electroluminescence of light emitting diodes with In-doped GaN barrier had better relative intensity and wavelength uniformity. We presume that the introduction of indium is the dominant factor leading to the decrease of the lattice mismatch strain between well and barrier, decrease of piezoelectricity and improvement in radiative recombination efficiency.