SrBi2Ta2O9/Bi4Ti3O12 multiple thin films were prepared on p-Si substrates by sol-gel method. The effect of ratio of SrBi2Ta2O9:Bi4Ti3O12 and annealing temperature on growth behavior, ferroelectric characteristics of SrBi2Ta2O9/Bi4Ti3O12 multiple thin films were investigated. Bi4Ti3O12 films on p-Si exhibit preferred c-axis-orientation growth, which favored the grow the high quality SrBi2Ta2O9/Bi4Ti3O12 multiple thin films. The remanent polarization Pr and the coercive field Ec of SrBi2Ta2O9/Bi4Ti3O12 multiple films both chage with the thickness ratio of SrBi2Ta2O9:Bi4Ti3O12 and annealing temperature. An appropriate ratio of multilayer thin films consisting of 1 layer of SrBi2Ta2O9 and 3 layers of Bi4Ti3O12 annealed at 650—700 ℃ gave the best ferroelectric properties with Pr of 8.1 μC/cm2 and Ec of 130 kV/cm, which is comparable to that of pure Bi4Ti3O12 films, and was fatigue-free up to 1011 switching cycles.