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中国物理学会期刊

YBa2Cu3O7-x涂层导体的外延生长和性能对CeO2缓冲层的依赖性

CSTR: 32037.14.aps.57.3132

Dependence of growth and property of YBa2Cu3O7-x coated conductors on the thickness of CeO2 buffer layer

CSTR: 32037.14.aps.57.3132
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  • 利用倾斜衬底沉积法在无织构的金属衬底上生长了MgO双轴织构的模板层,在这一模板层上实现了YBa2Cu3O7-x薄膜的外延生长.在外延YBa2Cu3O7-x薄膜前,依次沉积了钇稳定的立方氧化锆和CeO2作为缓冲层.利用X射线衍射2θ扫描、扫描、Ω扫描和极图分析测定了这些膜的结构和双轴织

     

    Biaxially textured MgO templates were grown on un-textured metal substrates by inclined-substrate-deposition and YBa2Cu3O7-x films were epitaxially grown on these substrates by pulsed laser deposition. Yttria-stablized-zirconia and CeO2 were deposited in turn as buffer layers prior to YBa2Cu3O7-x growth. The biaxial alignment features of the films were examined by X-ray diffraction 2θ-scan,pole-figure,-scan and rocking curve of Ω angles. The Raman spectroscopy,scanning electron microscopy and atomic force microscopy were used to characterize the orientation order,morphology and surface roughness of the YBa2Cu3O7-x films,respectively. The influence of the thickness of CeO2 on the properties of the YBa2Cu3O7-x films were investigated and the singnificant and unique dependence of the properties of YBa2Cu3O7-x films on the thickness of CeO2 were revealed. The possible mechanisms for this dependence were discussed.

     

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