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中国物理学会期刊

调制n型掺杂ZnSe/BeTe Ⅱ型量子阱结构的发光特性

CSTR: 32037.14.aps.57.3260

Optical property of modulated n-doped ZnSe/BeTe type-Ⅱ quantum wells

CSTR: 32037.14.aps.57.3260
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  • 报道了调制n型掺杂ZnSe/BeTe/ZnSe Ⅱ型量子阱(type-II QW)在极低温至室温(14—296K)条件下的各种光学性质. 反射光谱显示了对于非掺杂样品,激子(X)的跃迁起着支配作用,而只有在掺杂样品的光谱里展示了一个典型的负的带电激子(X-)的跃迁特征. PL光谱及其直线偏振度Pl都显著地依赖于n型掺杂量和平行于QW生长方向的外加电场. 这个特征被认为是由n型掺杂导致了内秉电场(built

     

    We report the optical properties of the modulated n-doped ZnSe/BeTe/ZnSe type-Ⅱ quantum wells. The reflection spectra have shown typical negatively charged exciton features only in a doped sample. The luminescence spectra and the polarization anisotropy depend strikingly on both the n-doping into the barrier layers and an applied external electric field perpendicular to the layer. These are explained by screening of the built-in electric field with n-doping and Stark effects due to the applied electric field. The electron density as well as the mass was determined in high magnetic field (up to 160 T) cyclotron-resonance measurements. It was found that the observed indirect PL transition occurs via the charged excitons in a type-II quantum configuration.

     

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