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退火对高Co含量Ti1-xCoxO2磁性半导体的影响

物理学报, 2008, 57(7): 4534-4538.
DOI: 10.7498/aps.57.4534
CSTR: 32037.14.aps.57.4534

Effect of annealing on the high Co-doped Ti1-xCoxO2 magnetic semiconductor

Acta Phys. Sin., 2008, 57(7): 4534-4538.
DOI: 10.7498/aps.57.4534
CSTR: 32037.14.aps.57.4534
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  • 摘要

    利用磁控溅射仪制备了高Co含量的Ti1-xCoxO2磁性半导体样品，并对样品分别在200℃，300℃和400℃进行退火研究.使用透射电子显微镜(TEM)对退火前后样品的结构进行表征，并用X射线光电子能谱(XPS)对退火前后样品中Co元素的化学状态进行鉴定.结果表明高Co含量的Ti1-xCoxO2磁性半导体处于一种亚稳状态，300℃以上的温度便使其结构与成分发生巨大变化.利用超导量子干涉磁强计(SQUID)测量退火前后样品的磁特性，结果表明样品的磁性有了明显的变化，这源于磁性产生的不同机理.

     

    Abstract

    High Co doping concentration Ti1-xCoxO2 magnetic semiconductor films were prepared by rf co-sputtering and then annealed for 2 hours at 200℃, 300℃ and 400℃ respectively. Microstructure and composition analysis by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) indicated that the films were in the metastable state and the annealing has large effect on their microstructure, composition and magnetism.

     

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