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中国物理学会期刊

本征GaAs中电子自旋极化对电子复合动力学的影响研究

CSTR: 32037.14.aps.57.6593

Effect of spin polarization on electron recombination dynamics in bulk intrinsic GaAs

CSTR: 32037.14.aps.57.6593
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  • 采用时间分辨圆偏振光和线偏振光抽运-探测光谱,研究了9.6 K温度下本征GaAs中自旋极化电子与非极化电子的复合动力学及其随光子能量演化.发现自旋极化对电子复合动力学具有显著影响.仅在导带底附近测量时,两种方法测试到的复合寿命一致,而在高过超能量电子态测量时,两种方法测试到的复合寿命不一致.指出时间分辨法拉第光谱中,用于反演求解电子自旋相干寿命的电子复合寿命应该使用圆偏振光抽运-探测获得的复合寿命,而不是线偏振光抽运-探测获得的寿命.理论计算与实验结果吻合较好.

     

    Time-resolved circularly polarized and linearly polarized pump-probe spectroscopies are used to study the recombination dynamics of spin-polarized and spin-nonpolarized electrons as well as its evolution with photon energy for an intrinsic GaAs at 9.6K. It is found that the spin polarization has a significant influence on the electron recombination dynamics. The spectroscopic measurements give the same recombination lifetime only when measured near the bottom of the conduction band, but different recombination lifetimes were measured in higher excess-energy states. It is pointed out that the recombination lifetime measured by circularly polarized pump-probe spectroscopy, rather than that measured by linearly-polarized pump-probe spectroscopy, should be used to solve for the lifetime of electron-spin coherence from time-resolved Faraday spectroscopic data. The theoretical calculation agrees well with the experimental results.

     

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