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中国物理学会期刊

掺杂ZnSe/BeTe Ⅱ型量子阱结构中带电激子的磁场效应

CSTR: 32037.14.aps.57.6609

Magnetic field effect of charged excitons in n-doped ZnSe/BeTe type-Ⅱ quantum wells

CSTR: 32037.14.aps.57.6609
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  • 报道了n型掺杂ZnSe/BeTe/ZnSe Ⅱ型量子阱(type-Ⅱ QW)在极低温 (5—10 K)条件下的各种光学性质. 磁场中(Farada配置)ZnSe层的反射光谱展示了一个典型的负的带电激子(X-)的跃迁特征. 对于空间间接光致发光(spacially indirect PL)光谱,它的主发光峰显示了一个反玻尔兹曼分布的非对称性,并且在磁场中(Voigt配置)它的峰值能量随磁场的增加而降低. 这些实验结果显示了该掺杂样品的空间间接PL是来自Ⅱ型QW结构所特有的带电激子的跃迁.

     

    We report results of the reflection (type-I, in ZnSe layer) and photoluminescence (PL) spectra (type-Ⅱ) measurements performed on n-doped ZnSe/BeTe/ZnSe type-Ⅱ quantum well structures at low temperature (5—10 K). The reflection spectra show a typical charged exciton (X-) feature. The PL spectra show an asymmetry of the peak, which is a characteristic feature for a charged exciton type transition. The dependence of the PL peak energy on the in-plane magnetic field is considered to be due to the magnetic-field-induced displacement of interlayer negatively charged exciton dispersion in momentum space.

     

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