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中国物理学会期刊

Co掺杂MgF2电子结构和光学特性的第一性原理研究

CSTR: 32037.14.aps.58.1901

First-principles study of electrical structures and optical properties of Co:MgF2 crystal

CSTR: 32037.14.aps.58.1901
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  • 基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算了Co掺杂MgF2晶体的几何结构、电子结构和光学性质.结果表明,Co掺杂导致MgF2晶体结构畸变,可能发生一种类四方和斜方型结构相变.由于Co原子的加入,体系的禁带宽度减小,可观察到半导体—金属性转变.计算也表明,Co掺杂对静态介电常数和光吸收系数有重要调制作用,所得结果与最近实验测量很好相符,揭示了Co:MgF2体系在光学元器件方面的潜在应用.

     

    Based on the density functional theory, the geometries, electrical structures and optical properties of Co-doped MgF2 system (Co:MgF2) are studied by first-principles ultra-soft pseudopotential plane-wave approach. With Co-doping increasing, a tetragonal-rhombic structural transition is obtained in Co:MgF2 The band gap decreases with increasing Co-doping, and a semiconductor-conductor transition is observed. Also, the calculations show that the static dielectric constant and the absorption coefficient can be remarkably modulated by Co-doping, indicating the potential applications of Co: MgF2 optical system.

     

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