We present the design and fabrication of 13 μm vertical-cavity surface-emitting lasers （VCSELs）. This laser exhibits continuous-wave single-mode operation up to 82℃. The theshold current as low as 051 mA and a slop efficiency of 029 W/A have been achieved. This laser is composed of a wafer-bonded GaAs/Al（Ga）As distributed Bragg reflector （DBR） and a dielectric SiO2/TiO2 DBR with InAsP/InGaAsP strain-compensated multi-quantum wells grown in the cavity. The effect of cavity mode-gain offset on device performance is then discussed.