SiN-based multilayer light-emitting devices, which employed Si-rich SiNx/N-rich SiNy multilayer as luminescence active layer, were fabricated by plasma enhanced chemical vapor deposition （PECVD）. Strong visible electroluminescence （EL） from the devices was observed at room temperature. By adjusting the Si/N ratio of the barrier layer, the effect of barrier on the electroluminescence properties was further investigated. The experimental results show that the performance of the devices can be significantly improved by controlling the Si/N ratio of the barrier layer.