A stressinduced voiding model based on the NabarroHerring mechanism has been proposed. The stressinduced voiding phenomena in Cu interconnects have been studied by the FIB crosssection technique and stress modeling. The driving force for the formation of stressinduced voids has been investigated. The relationship between stressinduced voiding, temperature, stress gradient and the dominant diffusion path are discussed. The results show that stress and stress gradient reach their peak values at the top surfaces of Cu M1 lines underneath the corner of the vials where voids are observed. Stress gradient shows crucial effect on the failure spot and the voiding rate. Stress migration is basically a diffusion and nucleation process of vacancies through the main diffusion path under the force of the stress gradient. The stress gradient and the diffusion terms vary oppositely with temperature and the maximum voiding rate is reached at a medium temperature.