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中国物理学会期刊

Mg,Cu 掺杂CdS电子结构的第一性原理研究

CSTR: 32037.14.aps.58.4137

First-principles calculation of CdS electronic structure doped with Mg and Cu

CSTR: 32037.14.aps.58.4137
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  • 采用基于密度泛函理论(DFT)的第一性原理的平面波超软赝势方法,对闪锌矿结构CdS晶体及CdS:M(M=Mg, Cu)的几何结构、能带结构、电子态密度、集聚数和电荷密度分布进行了研究.对掺杂后体系的几何结构进行了优化计算,发现Mg和Cu原子掺入CdS后晶格常量均减少,晶格发生畸变.在此基础上研究了掺杂对体系电子结构的影响.结果表明,Mg,Cu掺入CdS都能提供较多空穴态,形成p型电导,并且Cu较Mg是更好的p型掺杂剂.

     

    The geometry structure, band structure, partial density of states, mulliken changes, and electron density of zinc blende CdS and CdS:M(M=Mg, Cu) were studied systemically by the density functional theory(DFT) based on first-principles pseudopotential caculation. It is shown that the M-doped material has a smaller lattice constant, which results in a local lattice distortion. The band structure and density of states(DOS) were further calculated and analysed in detail. The results show that Cds doped with Mg, Cu can provid many states of holes. The p-type conduction was obtained. And Cu was a better p-type dopant than Mg.

     

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