ZnO nanowires with the average diameter of 20 nm and the length of longer than 10 μm were synthesized on GaAs substrate by chemical vapor deposition（CVD）. As-doped ZnO nanowires were obtained by annealing the samples at 600 ℃ for 30 min in oxygen. Single ZnO nanowire field effect transistors（FET） were fabricated by electron beam exposure and magnetron sputtering deposition and Ti/Au deposited as ohmic-contact electrodes. Based on the electrical properties of the single ZnO nanowire FET before and after annealing, we verified that p-type ZnO nanowire can be obtained by As doping effectively. The parameters of the single As doped ZnO nanowire FET were as follows: the transconductance was 35 nA/V, the hole density was 1.4×1018 cm-3, and the mobility was 6.0 cm2/V·s. We also obtained the photoluminescence spectrum of single As-doped ZnO nanowire: strong ultraviolet light at 383 nm, weaker yellow-green light, and red light due to the existence of AsZn-2VZn shallow acceptors.