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中国物理学会期刊

指数掺杂GaAs光电阴极分辨力特性分析

CSTR: 32037.14.aps.58.5842

Resolution characteristic of exponential-doping GaAs photocathodes

CSTR: 32037.14.aps.58.5842
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  • 通过建立和求解指数掺杂阴极中电子所遵循的二维连续性方程,得到了透射式指数掺杂阴极的调制传递函数表达式,并利用该表达式对阴极分辨力特性进行了理论计算和分析.计算结果显示,与均匀掺杂相比,指数掺杂能较明显地提高阴极的分辨力.当空间频率f在100—400 lp/mm范围时,分辨力的提高最为明显,如当f=200 lp/mm时,分辨力一般可提高20%—50%.与量子效率的提高相同,指数掺杂阴极分辨力的提高也是内建电场作用的结果.

     

    The modulation transfer function (MTF) of transmission-mode exponential-doping photocathodes has been solved from the 2-dimensional continuity equations. According to the MTF equation,we calculated and analyzed the theoretical resolution characteristic of the exponential-doping photocathodes. The calculated results show that,compared with the uniform-doping photocathodes,the exponential-doping structure can increase the resolution of photocathodes evidently. For the spatial frequency franges between 100 and 400 lp/mm,the increase of resolution is more pronounced. Let f=200 lp/mm,the resolution of exponential-doping photocathodes generally increases by 20%—50%. The resolution improvement of exponential-doping photocathodes,as well as the quantum efficiency improvement,is also attributed to the built-in electric field.

     

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