InGaN/GaN quantum wells have been grown by metal-organic chemical vapor deposition. InGaN/GaN quantum well with n-type InGaN/GaN thin layer or InGaN/GaN superlattice layer were studied. By introducing n-type InGaN/GaN thin layer or InGaN/GaN superlattice layer, the strain in quantum well active area was released, the surface morphology was improved and the density of V-type defect was redued. It was also found that the multiple quantum well photoluminescence intensity and the radiation efficiency of light emitting diodes were both higher than that of the structure without InGaN/GaN superlattice layer.