The deposition parameters of hydrogenated microcrystalline silicon （μc-Si:H） films were optimized for two factors, the siliane concentration and total flow rate, under high deposition power density and high deposition pressure by very high frequency plasma enhanced chemical vapor deposition（VHF-PECVD）.The device-grade film with activation energy of 047 eV was finally prepared at a rate of 142 nm/s when the siliane concentration was 45% and the total flow rate was 100 sccm.Meanwhile,the deposition rate of microcrystalline thin films has reached 21 nm/s under 600 Pa. We have researched the electronic property and the conductivity of thin films by use of grain boundary trapping model and statistical shift of Fermi level model respectively. Moreover, we analyzed the effect of post-oxygenation on the electronic performance of thin films.