A class of wide band-gap semiconductor offers an attractive alternative to Si and X-ray diode detector technologies for X-ray detection in inertia contract fusion （ICF） experiments, because diamond has high thermal conductivity, resistivity and breakdown field, fast charge collection, low leakage current, wide band-gap, low dielectric constant, large carrier drift velocity and outstanding radiation hardness. Using chemical vapor deposition （CVD）, diamond of 1 mm×1 mm×2 mm，1 mm×1 mm×3 mm was synthesized. The quality of diamond has been examined by Ramma spectrum and X-ray diffraction. And the detectors were fielded. Characteristics of these detectors have been studied on an 8 ps pulse-wide laser equipment and SGIII-prototype equipment. The results indicate that the rise time and full width at half maximum of the detector system reach 60 ps and 120 ps, respectively. The measured spectrum is consistent with the result of soft X-ray spectrometer. There is no response to 3ω0 laser for the CVD detector. The applications of CVD diamond for X-ray measurement in ICF experiments are reviewed.