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中国物理学会期刊

二维移相光栅光强分布的计算及在制备有序纳米硅阵列中的应用

CSTR: 32037.14.aps.59.3205

Light intensity distribution in laser interference crystallization and the fabrication of two-dimensional periodic nanocrystalline silicon array

CSTR: 32037.14.aps.59.3205
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  • 从菲涅耳衍射积分的一般形式出发,结合二维(2D)移相光栅掩模(PSGM)的具体参数,通过数值计算得到了作用于样品表面的光强分布.实验上,采用激光干涉晶化的方法,利用周期为400 nm的2D-PSGM调制KrF准分子激光器的脉冲激光束斑的能量分布,在氢化非晶硅(a-Si:H)薄膜上直接制备了2D的有序纳米硅(nc-Si)阵列.测试结果表明:2D的nc-Si阵列的周期和PSGM的相一致,晶化区域与理论模拟的结果符合得很好.

     

    Based on the general form of Fresnel diffraction,light intensity distribution in laser interference crystallization with a phase shifting grating mask (PSGM) was calculated.Two-dimensional (2D) periodic nanocrystalline silicon (nc-Si) array was fabricated by laser interference crystallization combined with 2D-PSGM.The light intensity irradiated on the surface of a-Si:H samples can be modulated by the PSGM with the periodicity of 400 nm.Experimental results demonstrate that the periodicity of 2D nc-Si array is the same as that of the PSGM,the crystalline regions of nc-Si array are consistant with the simulated results.

     

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