Li-N dual-doped ZnO thin films were deposited on n-type Si(100) substrates with Sol-gel method. Then the deposited films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the films have polycrystalline wurtzite-structure and high c-axis preferred orientation. The analysis of the results of the deposited thin films tested in the Hall measurement at room temperature shows that these thin films have p-type electrical conductivity. The optimized results obtained at 15.0at% Li-N dual-doped concentration are 0.34 Ω·cm for the electrical resistivity，16.43 cm2/V·s for the Hall mobility and 2.79×1019 cm-3 for the hole concentration，respectively. The photoluminescence (PL) spectra show that the thin films have strong emission of near-ultraviolet (UV) and violet light. However，the defect-related deep level emission is weak in visible regions. The effects of Li-N dual-doping concentration and annealing temperature on the structural，optical and electrical properties are also discussed in this paper.