ZnO thin films were implanted at room temperature with 80 keV N+ or 400 keV Xe+ ions. The implantation fluences of N+ and Xe+ ranged from 5.0×1014 to 1.0×1017/cm2, and from 2.0×1014 to 5.0×1015/cm2, respectively. The samples were analyzed using Raman spectroscopy and the Raman scattering modes of the N- and Xe-ion implanted samples varying with implantation fluences were investigated. It was found that Raman peaks (bands) at 130 and 578 cm-1 appeared in the spectra of ion-implanted ZnO samples, which are independent of the ion species, whereas a new peak at 274 cm-1 was found only in N-ion implanted samples, and Raman band at 470 cm-1 was found clearly in Xe-ion implanted samples. The relative intensity (peak area) increased with the increasing of the implantation fluences. From the comparison of the Raman spectra of N- and Xe-ion implanted ZnO samples and considering the damage induced by the ions, we analyzed the origin of the observed new Raman peaks (bands) and discussed the structure changes of ZnO films induced by N- and Xe-ion implantations.