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中国物理学会期刊

非对称方势阱中的激子及其与声子的相互作用

CSTR: 32037.14.aps.59.4961

Excitons and effects of phonons on excitons in asymmetric square quantum well

CSTR: 32037.14.aps.59.4961
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  • 采用类LLP(Lee-Low-Pines)变换和分数维变分法,在讨论有限深非对称方势阱Ga1-xAlxAs/ GaAs/Ga0.7Al0.3As的分数维基础上,计算了其中激子的基态能量以及声子对其影响,随着势阱宽度增加,激子能量先减小后增大,出现一个最小值.讨论了一侧势垒高度变化对分数维、激子基态能量的影响,并发现声子作用使得激子能量明显增大.另外,非对称方势阱中的激子结合能随阱宽的减小而增

     

    By LLP(Lee-Low-Pines)-like transformation and fractional-dimension variational treatment, the ground-state energies of excitons confined in Ga1-xAlxAs/GaAs/Ga0.7Al0.3As asymmetric square quantum well and the influence of phonons are demonstrated. The exciton ground-state energy has a minimum value with the increasing well width. And we make clear the effects of the barrier height on the fractional dimension, exciton ground energy and binding energy. After taking into account of the interaction of exciton with LO-phonons, the values of the exciton ground-state energies increase remarkablely. Moreover, the exciton binding energy increases as the asymmetric well-width decreases or the barrier height increases.

     

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