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中国物理学会期刊

基于双激发态对稠密等离子体中双电子复合速率系数的研究

CSTR: 32037.14.aps.59.7815

Study on rate coefficient of dielectronic recombination in dense plasma based on doubly excited state

CSTR: 32037.14.aps.59.7815
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  • 讨论了稠密等离子体中双电子复合速率系数的计算方法,推导出了在双激发态间跃迁过程和关于双激发态的碰撞电离和自电离过程的影响下双电子复合速率系数作为关于电子密度函数的计算公式,并以类氖镍离子为例进行了计算.计算结果展示了双电子复合速率系数随电子密度增大的具体变化趋势.此外,还给出了在不同原子过程影响下双电子复合速率系数的数据,并进行了分析.

     

    The method to calculate the rate coefficient of dielectronic recombination (DR) in dense plasma is discussed in this paper. The formula for calculating the DR rate coefficient as a function of electron density is derived under the effects of transition processes among doubly excited states, collisional ionization and autoionization corresponding to doubly excited states. And the calculation results for DR of Ne-like Ni based on the formula are given. The results show the trend of the change in DR rate coefficient as electron density increases. Additionally, the DR rate coefficients under the effects of different atomic processes are given and analyzed.

     

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