By reactive evaporation method, the SnO2:(Cu,In) transparent conductive films are prepared on glass, Corning7059 glass and quartz glass substrates separately. The element contents are analyzed, the distributions of all elements in the films are given, and the transmittances of samples are also measured. The results show that the UV transmittance of individual sample is high, and the transmittance of the film depends on annealing process. The resistance-temperature characteristics are measured and explained. The relationship between optical band gap and absorption coefficient is discussed. The simple method in which the transmittance curve is used to determine the optical band gap is given. The relation between mobility of the extended state and mobility edge with Fermi level is discussed. The results show that the preparation of copper and indium co-doped tin oxide transparent conductive films has achieved the purpose of reducing the cost, and some particular samples have wide band gap.