A 2D simulation of electrical and optical characteristics of dual-wavelength LED with GaN interval layers and quantum well barrier layers of different doping types was conducted with APSYS software. It showed that with the use of p-type doped GaN interval layer and quantum well barrier layers, we can greatly improve the hole concentration in QWs and reduce the electron overflow of the chip. We can also increase the luminous intensity and dramatically improve the dropping of internal quantum efficiency of the LED when the current increases.