Highly oriented Fe3O4 film was fabricated on Si (111) substrate by pulsed laser deposition. The resistivity-temperature curve shows that the Verwey transition point is about 122 K, and the electrical transport mechanism agrees with Mott varial-range hopping model and the small polaron model for temperatures below TV and above TV, repectively. The laser irradiation results in the decrease of the resistivity of the film in the whole temperature range were measured, which is attributed to the intersite transitions of Fe 3d t2g electrons.