In this paper,the preparetion of transparent ZnO ceramic with with low resistivity by high pressure sintering was reported,and the problem of high resistivity and opaqueness for ZnO under atmospheric pressure sintering was solved. The ZnO ceramic of optimal photoelectronic performance with high transparency and low resistivity under the pressure of 5 GPa and at the temperature of 800℃ was obtained. The transmissivily is about 49%, the electronic resistivity is 0.57 Ω ·cm, the width of band gap is 3.31 eV, the carrier concentration is 8.36×1017 cm-3 and the mobility is 23 cm2 ·V-1 ·s-1. The excellent n-type electrical conductivity is attributed to the contribution of Zni and VO donor defect. The results of this work have important significance for ZnO ceramic application as photoelectronic components for ultraviolet emission.