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为了保证在低温加工及溶液制备的情况下,能够提升高度区域规则的聚(3-己基噻吩) (RR-P3HT)有机场效应晶体管(OFET)的器件性能,本文研究了室温下乙醇及乙腈非溶剂的掺杂,及其对高分子自组织机理与导致的RR-P3HT OFET电学性能的影响.实验发现,适量进行乙醇及乙腈非溶剂的掺杂,将促进RR-P3HT薄膜形成更多期望的微晶粒薄片结构,完善高分子自组织机理,导致RR-P3HT OFET电学性能的提升.实验表明,在RR-P3HT溶液中进行5 %乙腈添加后,其器件场效应迁移率的值由原来的4.04×10<
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关键词:
- 高度区域规则的聚(3-己基噻吩)有机场效应晶体管 /
- 非溶剂掺杂 /
- 自组织机理 /
- 场效应迁移率
In order to enhance the performance of poly(3-hexylthiophene) (RR-P3HT) organic field-effect transistors (OFET) by low temperature solution-process of non-solvent addition (acetonitrile and ethanol), the resulting self-organization of polymer semiconductor layer and performance of RR-P3HT OFET are studied in this paper. The results fshow that an appropriate non-solvent addition (acetonitrile and ethanol) promotes the formation of more microcrystalline lamellae and improves the self-organization of polymer semiconductor layer, resulting in electrical properties enhancement of polymer OFET. The results indicate that the field-effect of RR-P3HT OFET with 5% acetonitrile addition can reach 3.39×10-3 cm2/V ·s, which is higher by a factor of 8 than that with 0% acetonitrile addition. Encessive non-solvent addition (acetonitrile and ethanol) leads to more precipitates which reduce microcrystalline lamellae and lowers the quality of polymer film, resulting in performance degradation of polymer OFET.-
Keywords:
- regioregular poly(3-hexylthiophene) organic field-effect transistor /
- non-solvent addition /
- self-organization /
- field-effect mobility







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