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中国物理学会期刊

Nb/SnO2复合薄膜的制备、结构及光电性能

CSTR: 32037.14.aps.60.038203

Preparationand structure and optical-electrical properties of the Nb/SnO2 composite thin film

CSTR: 32037.14.aps.60.038203
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  • 用溶胶-凝胶旋涂法在玻璃基底上制备出Nb/SnO2复合透明导电薄膜,利用XRD,SEM,紫外—可见分光光度计,四探针电阻仪等测试方法对Nb/SnO2复合薄膜的结构和物性进行了研究.结果表明: 当Nb含量小于0.99at%时,Nb/SnO2复合薄膜为较纯的四方金红石结构;复合薄膜中晶粒分布均匀,平均尺寸在5—7 nm.当Nb含量小于0.99at%时,Nb/SnO2复合薄膜的电阻率先减小后增大,当Nb含量为0.37at%时

     

    The Nb/SnO2 composite thin films were successfully synthesized by sol-gel spin-coating method on glass substrate. The structures and properties of Nb/SnO2 composite thin films were characterized by X-ray diffraction (XRD), scanning electron microscopey (SEM), ultraviolet visible near-infrared spectrophotometry and four-probe method. The effects of Nb doping on structure and optical-electrical properties of the Nb/SnO2 composite thin films were researched. The results indicate that a tetragonal rutile structure is retained when the Nb content is less than 0.99at%, and the nano-particles are distributed homogeneously in the thin films and their size can be controlled in the range of 5—7 nm. The resistivity of Nb/SnO2 composite thin films decreases and then increases when the Nb content is less than 0.99at%, and reaches a very low value of 9.49×10-2 Ω ·cm at 0.37at% Nb. In the range of 400—700 nm visible region, the transmittance of Nb/SnO2 composite thin films is up to 90% when the Nb content is less than 0.99at%, and the optical band gap of Nb/SnO2 composite thin films are in the range of 3.9—4.1 eV. The visible light transmittance of Nb/SnO2 composite thin films significantly reduce at 1.23at% Nb.

     

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