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中国物理学会期刊

微腔面发射器件外量子效率研究

CSTR: 32037.14.aps.60.064203

External quantum efficiency of microcavity planar emitting devices

CSTR: 32037.14.aps.60.064203
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  • 结合微腔面发射器件辐射/发光亮度的空间分布以及相对光谱功率分布给出了器件外量子效率的计算模型. 该模型可以计算工作于不同波段的微腔面发射器件的外量子效率,如红外波段的垂直腔面发射激光器,可见光波段的微腔有机发光二极管和谐振腔发光二极管以及太赫兹波段的平面微腔结构等. 制备了结构为玻璃/DBR /ITO /NPB /Alq ∶C545T/Alq/LiF/Al的微腔有机电致发光器件,测试其不同观察角度下器件的发光亮度以及发光光谱. 当电流密度和发光亮度分别为14 A/m2和100 cd/

     

    The calculation models of the external quantum efficiency for the planar surface emitting devices are presented with considering their spatial distribution of radiance/luminance and relative spectral power distribution. These models can be applied to all kinds of planar surface emitting devices including OLEDs, VCSEL, MOLED, MCLED and planar THz emitting devices. Two planar emitting devices with and without cavity are fabricated with the structure of Glass /DBR /ITO /NPB /Alq ∶C545T /Alq /LiF /Al and Glass /ITO /NPB /Alq ∶C545T /Alq /LiF /Al. The external quantum efficiencies are calculated at different current densities using the corresponding model. The external quantum efficiency of the cavity device is close to 1.5% at a current density of 14 A/m2 and brightness of 100 cd/m2, and reaches 2% around 0.14 A/m2 and 2.2 cd/m2.

     

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