The photovoltaic effect and the good rectifying behavior are observed in La0.88Te0.12MnO3(LTMO)/Si heterostructure fabricated by a pulsed laser deposition method. The photovoltage increases quickly to a maximum value at about 394 μs and then decreases gradually. The maximum photovoltage is about 13.7 mV at T = 80 K. The maximum photovoltage decreases with temperature increasing, which is attributed to the stronger thermal fluctuation. A nonlinear decrease of the maximum photovoltage in the photovoltages-temperature curve is observed, which is mainly caused by the change in the band structure of the LTMO layer due to the metal-insulator transition.