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小尺寸应变Si nMOSFET物理模型的研究

物理学报, 2011, 60(9): 098501.
DOI: 10.7498/aps.60.098501
CSTR: 32037.14.aps.60.098501

Study of physically modeling for small-scaled strained Si nMOSFET

Acta Phys. Sin., 2011, 60(9): 098501.
DOI: 10.7498/aps.60.098501
CSTR: 32037.14.aps.60.098501
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  • 摘要

    本文运用高斯定律得出多晶SiGe栅应变Si nMOSFET的准二维阈值电压模型,并从电流密度方程出发建立了小尺寸应变Si nMOS器件的I-V特性模型.对所得模型进行计算分析,得出沟道Ge组分、多晶Si1-yGey栅Ge组分、栅氧化层厚度、应变Si层厚度、栅长以及掺杂浓度对阈值电压的影响.运用二维器件模拟器对器件表面势和I-V特性进行了仿真,所得结果与模型仿真结果一致,从而证明了模型的正确性.

     

    Abstract

    In this paper, quasi-2D threshold voltage model of strained Si nMOS with polycrystalline SiGe gate is established based on the Guass Law and its I-V character model is also built based on the current density equation. The influence of relevant parameter on threshold voltage is analyzed by numerical analysis, and the validity of the model is verified by device simulator.

     

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