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中国物理学会期刊

Cr,Mg:GSGG 晶体生长、光谱性能及Cr4+形成机理的研究

CSTR: 32037.14.aps.61.038102

Study of growth, spectra properties and Cr4+ formation mechanism of Cr,Mg:GSGG crystal

CSTR: 32037.14.aps.61.038102
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  • 采用传统提拉法单晶生长技术成功生长出了Cr,Mg:GSGG晶体, 并对生长出的晶体样品进行了氧化气氛和还原气氛退火处理. 通过对比分析退火处理前后样品吸收光谱的变化, 推断出晶体中四面体配位Cr4+离子的形成机理为: 晶体生长和高温氧化气氛退火的过程中, 四价Cr4+离子首先在八面体格位上形成, 然后在热激发作用下与邻近四面体格位上的Ga3+离子发生置换反应, 从而形成一定浓度的四面体配位Cr4+离子. 实验结果还表明, 随着电荷补偿离子Mg2+离子浓度的增大, 更有利于提高四面体配位Cr4+离子的浓度.

     

    Cr,Mg:GSGG crystals are successfully grown by the Czochralski method. The influences of reducing- and oxidizing- annealing treatments on the absorption spectra of Cr,Mg:GSGG crystals are investigated. From the changes of their absorption spectra, it can be inferred that the Cr4+ ions are initially generated at octahedrally coordinated sites, and then exchange positions with tetrahedral Ga3+ ions in neighboring sites under heat exciting. Differences between absorption spectra also suggest that Mg2+ ions can improve the concentration of tetrahedral Cr4+ ions.

     

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